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NVMFS5C404NET1G

Name: onsemi NVMFS5C404NET1G
Brand: onsemi
SKU: 863-NVMFS5C404NET1G
Price: 6.01 CAD
Availability: InStock

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See Product Specifications

Mouser #:

863-NVMFS5C404NET1G

Mfr. #:

NVMFS5C404NET1G

Mfr.:

onsemi

Description:

MOSFETs T6 40V HEFET

Lifecycle:

NRND:

Not recommended for new designs.

Datasheet:

NVMFS5C404NET1G Datasheet

ECAD Model:

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More Information

Learn more about onsemi NVMFS5C404NET1G

In Stock: 1,350

Stock:: 1,350 Can Ship Immediately

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Factory Lead-Time:: 14 Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

$-.--

Ext. Price:

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Est. Tariff:

Pricing (CAD)

Qty.	Unit Price	Ext. Price
	$6.01	$6.01
	$3.94	$39.40
	$2.74	$274.00
	$2.25	$1,125.00
	$2.09	$2,090.00
Full Reel (Order in multiples of 1500)
	$2.08	$3,120.00
	$2.00	$9,000.00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package / Case:	DFN-5
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	40 V
Id - Continuous Drain Current:	378 A
Rds On - Drain-Source Resistance:	700 uOhms
Vgs - Gate-Source Voltage:	20 V
Vgs th - Gate-Source Threshold Voltage:	4 V
Qg - Gate Charge:	128 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	200 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Brand:	onsemi
Configuration:	Single
Fall Time:	109 ns
Product Type:	MOSFETs
Rise Time:	113 ns
Series:	NVMFS5C404N
Factory Pack Quantity:	1500
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	77 ns
Typical Turn-On Delay Time:	16 ns

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Datasheet

NVMFS5C404NET1G Datasheet

CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

Trench6 N-Channel MV MOSFETs

onsemi Trench6 N-Channel MV MOSFETs are 30V, 40V, and 60V MOSFETs produced using an advanced Power Trench process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode.