HGTP10N120BN

512-HGTP10N120BN
HGTP10N120BN

Mfr.:

Description:
IGBTs 35A 1200V N-Ch

Lifecycle:
Obsolete
Datasheet:
ECAD Model:
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Availability

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Product Attribute Attribute Value Select Attribute
onsemi
Product Category: IGBTs
Shipping Restrictions:
 Mouser does not presently sell this product in your region.
RoHS:  
Si
TO-220-3
Through Hole
Single
1.2 kV
2.45 V
- 20 V, 20 V
35 A
298 W
- 55 C
+ 150 C
HGTP10N120BN
Tube
Brand: onsemi
Continuous Collector Current Ic Max: 35 A
Gate-Emitter Leakage Current: +/- 250 nA
Product Type: IGBT Transistors
Factory Pack Quantity: 800
Subcategory: IGBTs
Part # Aliases: HGTP10N120BN_NL
Unit Weight: 1.800 g
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Attributes selected: 0

CAHTS:
8541290000
CNHTS:
8541210000
USHTS:
8541290065
TARIC:
8541290000
MXHTS:
85412999
ECCN:
EAR99

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