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FCH023N65S3L4

Name: onsemi FCH023N65S3L4
Brand: onsemi
SKU: 512-FCH023N65S3L4
Price: 37.54 CAD
Availability: InStock

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Mouser #:

512-FCH023N65S3L4

Mfr. #:

FCH023N65S3L4

Mfr.:

onsemi

Description:

MOSFETs 650V N-Channel SuperFET III MOSFET

Datasheet:

FCH023N65S3L4 Datasheet

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In Stock: 125

Stock:: 125 Can Ship Immediately

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Factory Lead-Time:: 16 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (CAD)

Qty.	Unit Price	Ext. Price
	$37.54	$37.54
	$25.68	$256.80

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	Through Hole
Package / Case:	TO-247-4
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	650 V
Id - Continuous Drain Current:	75 A
Rds On - Drain-Source Resistance:	23 mOhms
Vgs - Gate-Source Voltage:	- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage:	2.5 V
Qg - Gate Charge:	222 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	595 W
Channel Mode:	Enhancement
Tradename:	SuperFET III
Packaging:	Tube
Brand:	onsemi
Configuration:	Single
Product Type:	MOSFETs
Series:	FCH023N65S3L4
Factory Pack Quantity:	450
Subcategory:	Transistors
Unit Weight:	6 g

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Datasheet

FCH023N65S3L4 Datasheet

PCN

CAHTS:: 8541290000
CNHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
KRHTS:: 8541299000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

Solutions for Energy Infrastructure

onsemi Solutions for Energy Infrastructure address the landscape for energy generation, distribution, and storage that is rapidly evolving to fulfill targets set by government policy and increasing consumption. Heightened efficiency targets, reductions of CO2 emissions, and a focus on renewable and clean energy are key factors in this Energy Infrastructure Evolution. onsemi offers a comprehensive portfolio of energy efficient solutions to serve the demanding needs of high-power applications including Silicon Carbide (SiC) Diodes, Intelligent Power Modules, and Current Sense Amplifiers.

SuperFET® III MOSFETs

onsemi SuperFET® III MOSFETs are high voltage Super-Junction (SJ) N-Channel MOSFETs designed to meet the high power density, system efficiency, and exceptional reliability requirements of telecom, server, electric vehicle (EV) charger and solar products. These devices combine best-in-class reliability, low EMI, excellent efficiency, and superior thermal performance to make them an ideal choice for high-performance applications. Complementing their performance characteristics, the broad range of package options offered by onsemi SuperFET III MOSFETs gives product designers high flexibility, particularly with size-constrained designs.