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TK7R2E15Q5,S1X

Name: Toshiba TK7R2E15Q5,S1X
Brand: Toshiba
SKU: 757-TK7R2E15Q5S1X
Price: 5.81 CAD
Availability: InStock

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See Product Specifications

Mouser #:

757-TK7R2E15Q5S1X

Mfr. #:

TK7R2E15Q5,S1X

Mfr.:

Toshiba

Description:

MOSFETs TO220 150V 1.4A N-CH

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

TK7R2E15Q5,S1X Datasheet (PDF)

ECAD Model:

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More Information

Learn more about Toshiba TK7R2E15Q5,S1X

In Stock: 350

Stock:: 350 Can Ship Immediately

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Factory Lead-Time:: 16 Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Est. Tariff:

Pricing (CAD)

Qty.	Unit Price	Ext. Price
	$5.81	$5.81
	$3.38	$33.80
	$3.08	$308.00
	$2.73	$1,365.00
	$2.60	$2,600.00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Toshiba
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	Through Hole
Package / Case:	TO-220-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	150 V
Id - Continuous Drain Current:	84 A
Rds On - Drain-Source Resistance:	7.2 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	4.5 V
Qg - Gate Charge:	66 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	230 W
Channel Mode:	Enhancement
Packaging:	Tube
Brand:	Toshiba
Configuration:	Single
Fall Time:	66 ns
Product Type:	MOSFETs
Rise Time:	66 ns
Factory Pack Quantity:	50
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	110 ns
Typical Turn-On Delay Time:	96 ns

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Datasheet

TK7R2E15Q5,S1X Datasheet (PDF)

CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

TKx Silicon N-Channel MOSFETs

Toshiba TKx Silicon N-Channel MOSFETs are available in U-MOSX-H and DTMOSVI types and offer exceptional performance characteristics. These MOSFETs are designed with fast reverse recovery times that enhance efficiency in high-speed switching applications by reducing the delay between the turn-off and turn-on states. The low drain-source on-resistance [R_DS(on)] contributes to minimal power losses and improved thermal management, making them ideal for applications requiring high current handling with low energy dissipation.