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TK70J20D,S1Q

Name: Toshiba TK70J20D,S1Q
Brand: Toshiba
SKU: 757-TK70J20DS1Q
Price: 13.18 CAD
Availability: InStock

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Mouser #:

757-TK70J20DS1Q

Mfr. #:

TK70J20D,S1Q

Mfr.:

Toshiba

Description:

MOSFETs N-Ch 200V 70A 410W MOSVII 160nC .0029

Datasheet:

TK70J20D,S1Q Datasheet (PDF)

ECAD Model:

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In Stock: 90

Stock:: 90 Can Ship Immediately

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Factory Lead-Time:: 20 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (CAD)

Qty.	Unit Price	Ext. Price
	$13.18	$13.18
	$9.59	$95.90
	$7.98	$798.00
	$7.10	$3,550.00
	$6.32	$6,320.00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Toshiba
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	Through Hole
Package / Case:	TO-3PN-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	200 V
Id - Continuous Drain Current:	70 A
Rds On - Drain-Source Resistance:	27 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	3.5 V
Qg - Gate Charge:	160 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	410 W
Channel Mode:	Enhancement
Tradename:	MOSVII
Brand:	Toshiba
Configuration:	Single
Fall Time:	745 ns
Product Type:	MOSFETs
Rise Time:	230 ns
Factory Pack Quantity:	25
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	105 ns
Typical Turn-On Delay Time:	155 ns
Unit Weight:	4.600 g

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Datasheet

TK70J20D,S1Q Datasheet (PDF)

CNHTS:: 8541290000
USHTS:: 8541290065
TARIC:: 8541290000
ECCN:: EAR99

π-MOS VII MOSFETs

Toshiba π-MOS VII MOSFETs are 10V Gate Drive, single N-channel devices, combining π-MOS technology with a planar process to provide a wide selection of voltage and R_DS(ON) ratings. These high-voltage MOSFETs offer a drain-source voltage range of 250V up to 650V and a drain current range from 2A to 20A. Vishay π-MOS VII MOSFETs are offered in TO-220-3 and TO-252 through-hole packages and compact DPAK-3 and PW-Mold-3 surface mount packages.