TK3A65DA(STA4,QM)

Toshiba
757-TK3A65DASTA4QM
TK3A65DA(STA4,QM)

Mfr.:

Description:
MOSFETs N-Ch MOS 2.5A 650V 35W 490pF 2.51

Datasheet:
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Learn more about Toshiba TK3A65DA(STA4,QM)

In Stock: 240

Stock:
240 Can Ship Immediately
Factory Lead-Time:
54 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
$-.--
Ext. Price:
$-.--
Est. Tariff:

Pricing (CAD)

Qty. Unit Price
Ext. Price
$3.19 $3.19
$1.53 $15.30
$1.37 $137.00
$1.05 $525.00
$0.905 $905.00
$0.853 $4,265.00

Product Attribute Attribute Value Select Attribute
Toshiba
Product Category: MOSFETs
RoHS:  
Si
Through Hole
TO-220FP-3
N-Channel
1 Channel
650 V
2.5 A
2.51 Ohms
35 W
MOSVII
Tube
Brand: Toshiba
Configuration: Single
Product Type: MOSFETs
Series: TK3A65DA
Factory Pack Quantity: 50
Subcategory: Transistors
Transistor Type: 1 N-Channel
Unit Weight: 2 g
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Attributes selected: 0

CAHTS:
8541290000
CNHTS:
8541290000
USHTS:
8541290065
JPHTS:
8541290100
TARIC:
8542399000
MXHTS:
8542399901
ECCN:
EAR99

π-MOS VII MOSFETs

Toshiba π-MOS VII MOSFETs are 10V Gate Drive, single N-channel devices, combining π-MOS technology with a planar process to provide a wide selection of voltage and RDS(ON) ratings. These high-voltage MOSFETs offer a drain-source voltage range of 250V up to 650V and a drain current range from 2A to 20A. Vishay π-MOS VII MOSFETs are offered in TO-220-3 and TO-252 through-hole packages and compact DPAK-3 and PW-Mold-3 surface mount packages.

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