TK10A60W,S4VX

Toshiba
757-TK10A60WS4VX
TK10A60W,S4VX

Mfr.:

Description:
MOSFETs N-Ch 600V 9.7A 30W DTMOSIV 700pF 20nC

ECAD Model:
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In Stock: 79

Stock:
79 Can Ship Immediately
Factory Lead-Time:
32 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
$-.--
Ext. Price:
$-.--
Est. Tariff:

Pricing (CAD)

Qty. Unit Price
Ext. Price
$2.85 $2.85
$2.14 $21.40
$2.06 $206.00
$2.02 $1,010.00
$1.94 $1,940.00
10,000 Quote

Product Attribute Attribute Value Select Attribute
Toshiba
Product Category: MOSFETs
RoHS:  
Si
Through Hole
TO-220-3
N-Channel
1 Channel
600 V
9.7 A
327 mOhms
- 30 V, 30 V
3.7 V
20 nC
- 55 C
+ 150 C
30 W
Enhancement
DTMOSIV
Tube
Brand: Toshiba
Configuration: Single
Fall Time: 5.5 ns
Product Type: MOSFETs
Rise Time: 22 ns
Series: TK10A60W
Factory Pack Quantity: 50
Subcategory: Transistors
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 75 ns
Typical Turn-On Delay Time: 45 ns
Unit Weight: 2 g
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CAHTS:
8541290000
CNHTS:
8541290000
USHTS:
8541290065
JPHTS:
8541290100
KRHTS:
8541299000
TARIC:
8541290000
MXHTS:
85412999
ECCN:
EAR99

DTMOSIV Series MOSFETs

Toshiba DTMOSIV MOSFETs use the state-of-the-art single epitaxial process, which provides a 30% reduction in RDS(on), a figure of merit (FOM) for MOSFETs, compared to its predecessor, DTMOSIII. This reduction in the RDS(on) makes it possible to house lower RDS(on) chips in the same packages. This helps to improve efficiency and reduce the size of power supplies. Toshiba DTMOSIV MOSFETs are ideal for use with switching regulators.