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TK099N60Z1,S1F

Name: Toshiba TK099N60Z1,S1F
Brand: Toshiba
SKU: 757-TK099N60Z1S1F
Price: 7.66 CAD
Availability: InStock

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See Product Specifications

Mouser #:

757-TK099N60Z1S1F

Mfr. #:

TK099N60Z1,S1F

Mfr.:

Toshiba

Description:

MOSFETs N-ch MOSFET, 600 V, 0.099 O@10V, TO-247, DTMOS?

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

TK099N60Z1,S1F Datasheet (PDF)

ECAD Model:

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More Information

Learn more about Toshiba TK099N60Z1,S1F

In Stock: 30

Stock:: 30 Can Ship Immediately

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Factory Lead-Time:: 16 Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Est. Tariff:

Pricing (CAD)

Qty.	Unit Price	Ext. Price
	$7.66	$7.66
	$5.61	$56.10
	$3.75	$450.00
	$3.19	$1,626.90
	$3.12	$3,182.40

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Toshiba
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	Through Hole
Package / Case:	TO-247-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	600 V
Id - Continuous Drain Current:	25 A
Rds On - Drain-Source Resistance:	99 mOhms
Vgs - Gate-Source Voltage:	30 V
Qg - Gate Charge:	36 nC
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	176 W
Channel Mode:	Enhancement
Packaging:	Tube
Brand:	Toshiba
Configuration:	Single
Fall Time:	4.6 ns
Product Type:	MOSFETs
Rise Time:	37 ns
Factory Pack Quantity:	30
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	82 ns
Typical Turn-On Delay Time:	63 ns

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Datasheet

TK099N60Z1,S1F Datasheet (PDF)

CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

TKx Silicon N-Channel MOSFETs

Toshiba TKx Silicon N-Channel MOSFETs are available in U-MOSX-H and DTMOSVI types and offer exceptional performance characteristics. These MOSFETs are designed with fast reverse recovery times that enhance efficiency in high-speed switching applications by reducing the delay between the turn-off and turn-on states. The low drain-source on-resistance [R_DS(on)] contributes to minimal power losses and improved thermal management, making them ideal for applications requiring high current handling with low energy dissipation.