CSD25484F4

Texas Instruments
595-CSD25484F4
CSD25484F4

Mfr.:

Description:
MOSFETs -20-V P channel Nex FET power MOSFET s A A 595-CSD25484F4T

ECAD Model:
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In Stock: 3,541

Stock:
3,541 Can Ship Immediately
Factory Lead-Time:
6 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
$-.--
Ext. Price:
$-.--
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 3000)

Pricing (CAD)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™
$0.667 $0.67
$0.40 $4.00
$0.257 $25.70
$0.206 $103.00
$0.183 $183.00
Full Reel (Order in multiples of 3000)
$0.153 $459.00
$0.138 $828.00
$0.118 $1,062.00
$0.113 $2,712.00
† $8.50 MouseReel™ fee will be added and calculated in your shopping cart. All MouseReel™ orders are non-cancellable and non-returnable.

Alternative Packaging

Mfr. Part #:
Packaging:
Reel, Cut Tape, MouseReel
Availability:
In Stock
Price:
$1.13
Min:
1

Similar Product

Texas Instruments CSD25484F4T
Texas Instruments
MOSFETs 20V P-Ch FemtoFET MO SFET A 595-CSD25484 A 595-CSD25484F4

Product Attribute Attribute Value Select Attribute
Texas Instruments
Product Category: MOSFETs
RoHS:  
Si
SMD/SMT
PICOSTAR-3
P-Channel
1 Channel
20 V
2.5 A
825 mOhms
- 12 V, 12 V
1.2 V
1.09 nC
- 55 C
+ 150 C
500 mW
Enhancement
Reel
Cut Tape
MouseReel
Brand: Texas Instruments
Configuration: Single
Fall Time: 8.5 ns
Forward Transconductance - Min: 3.5 S
Product Type: MOSFETs
Rise Time: 5 ns
Series: CSD25484F4
Factory Pack Quantity: 3000
Subcategory: Transistors
Transistor Type: 1 P-Channel
Typical Turn-Off Delay Time: 18 ns
Typical Turn-On Delay Time: 9.5 ns
Unit Weight: 0.400 mg
Products found:
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CAHTS:
8542390000
CNHTS:
8541210000
USHTS:
8541210095
JPHTS:
854239099
TARIC:
8542399000
MXHTS:
8542399901
ECCN:
EAR99

FemtoFET Power MOSFETs

Texas Instruments FemtoFET Power MOSFETs offer an ultra small footprint (0402 case size) with ultra-low resistance (70% less than competitors). These MOSFETs include ultra low Qg, Qgd specifications and have an optimized ESD rating. They are available in a land grid array (LGA) package. This package maximizes silicon content which makes them ideal for space-constrained applications. These power MOSFETs offer low power dissipation and low switching losses for improved light load performance. Typical applications for these devices include handheld, mobile, load switching, general purpose switching, and battery applications.