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STWA48N60M2

Name: STMicroelectronics STWA48N60M2
Brand: STMicroelectronics
SKU: 511-STWA48N60M2
Price: 11.25 CAD
Availability: InStock

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Mouser #:

511-STWA48N60M2

Mfr. #:

STWA48N60M2

Mfr.:

STMicroelectronics

Description:

MOSFETs N-channel 600 V, 60 mOhm typ., 42 A MDmesh M2 Power MOSFET in a TO-247 long lead

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Datasheet:

STWA48N60M2 Datasheet (PDF)

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In Stock: 83

Stock:: 83 Can Ship Immediately

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Factory Lead-Time:: 20 Weeks Estimated factory production time for quantities greater than shown.

Quantities greater than 83 will be subject to minimum order requirements.

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Pricing (CAD)

Qty.	Unit Price	Ext. Price
	$11.25	$11.25
	$7.93	$79.30
	$6.61	$661.00
	$5.50	$3,300.00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	Through Hole
Package / Case:	TO-247-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	650 V
Id - Continuous Drain Current:	42 A
Rds On - Drain-Source Resistance:	70 mOhms
Vgs - Gate-Source Voltage:	- 25 V, 25 V
Vgs th - Gate-Source Threshold Voltage:	2 V
Qg - Gate Charge:	70 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	300 W
Channel Mode:	Enhancement
Tradename:	MDmesh
Brand:	STMicroelectronics
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Fall Time:	119 ns
Product Type:	MOSFETs
Rise Time:	17 ns
Series:	STWA48N60M2
Factory Pack Quantity:	600
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	13 ns
Typical Turn-On Delay Time:	18.5 ns
Unit Weight:	6 g

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Datasheet

STWA48N60M2 Datasheet (PDF)

CAHTS:: 8542310000
CNHTS:: 8541290000
USHTS:: 8541290065
TARIC:: 8541290000
MXHTS:: 8542310302
ECCN:: EAR99

MDmesh™ II Power MOSFETs

STMicroelectronics 600 and 650V MDmesh™ M2 series of super-junction Power MOSFETs are optimized for soft-switching applications (LLC resonant power supplies) thanks to the optimized trade-off between R_DS(on), gate charge (Qg) and intrinsic capacitances (Ciss, Coss). They also are suitable for PFC applications, especially at light loads.