STPSC6G065D

STMicroelectronics
511-STPSC6G065D
STPSC6G065D

Mfr.:

Description:
SiC Schottky Diodes 650 V, 6A High surge Silicon Carbide power Schottky diode
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Lifecycle:
New Product:
New from this manufacturer.
Datasheet:
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In Stock: 1,000

Stock:
1,000 Can Ship Immediately
Factory Lead-Time:
6 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
$-.--
Ext. Price:
$-.--
Est. Tariff:

Pricing (CAD)

Qty. Unit Price
Ext. Price
$3.67 $3.67
$1.80 $18.00
$1.61 $161.00
$1.29 $645.00
$1.17 $1,170.00
$1.10 $2,200.00
$1.03 $5,150.00

Product Attribute Attribute Value Select Attribute
STMicroelectronics
Product Category: SiC Schottky Diodes
Through Hole
TO-220AC-2
Single
6 A
650 V
1.3 V
46 A
6 uA
- 55 C
+ 175 C
Tube
Brand: STMicroelectronics
Product Type: SiC Schottky Diodes
Factory Pack Quantity: 1000
Subcategory: Diodes & Rectifiers
Vr - Reverse Voltage: 650 V
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Attributes selected: 0

Datasheet

CAHTS:
8541100090
USHTS:
8541100080
TARIC:
8541100000
ECCN:
EAR99

Standard Products

STMicroelectronics Standard Products are a broad range of industry-standard and drop-in replacements for the most popular general-purpose analog ICs, discretes, and serial EEPROMs. The Standard Products are manufactured to the highest quality standards with many AECQ-qualified for automotive applications. A comprehensive set of STMicroelectronics design aids, including SPICE, IBIS models, and simulation tools, is available to make adding to a design-in easy.

STPSC 650V Schottky Silicon-Carbide Diodes

STMicroelectronics STPSC 650V Schottky Silicon-Carbide Diodes are ultra-high-performance power Schottky diodes. The wide bandgap material allows the design of a Schottky diode structure with a 650V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. These STMicroelectronics devices are especially suited for PFC applications, boosting performance in hard switching conditions. High forward surge capability ensures good robustness during transient phases.

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