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STPSC30G12WL

Name: STMicroelectronics STPSC30G12WL
Brand: STMicroelectronics
SKU: 511-STPSC30G12WL
Price: 21 CAD
Availability: InStock

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Mouser #:

511-STPSC30G12WL

Mfr. #:

STPSC30G12WL

Mfr.:

STMicroelectronics

Description:

SiC Schottky Diodes 1200 V, 20 A High surge Silicon Carbide Power Schottky Diode

Complete Your Design

Datasheet:

STPSC30G12WL Datasheet (PDF)

ECAD Model:

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In Stock: 5

Stock:: 5 Can Ship Immediately

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Factory Lead-Time:: 25 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (CAD)

Qty.	Unit Price	Ext. Price
	$21.00	$21.00
	$15.19	$151.90
	$15.17	$9,102.00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	SiC Schottky Diodes
RoHS:
Mounting Style:	Through Hole
Package / Case:	DO-247-2
Configuration:	Single
If - Forward Current:	30 A
Vrrm - Repetitive Reverse Voltage:	1.2 kV
Vf - Forward Voltage:	1.35 V
Ifsm - Forward Surge Current:	250 A
Ir - Reverse Current:	15 uA
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Packaging:	Tube
Brand:	STMicroelectronics
Product Type:	SiC Schottky Diodes
Factory Pack Quantity:	600
Subcategory:	Diodes & Rectifiers
Unit Weight:	6 g

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Datasheet

STPSC30G12WL Datasheet (PDF)

PCN

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CAHTS:: 8541100090
USHTS:: 8541100080
TARIC:: 8541100000
ECCN:: EAR99

Standard Products

STMicroelectronics Standard Products are a broad range of industry-standard and drop-in replacements for the most popular general-purpose analog ICs, discretes, and serial EEPROMs. The Standard Products are manufactured to the highest quality standards with many AECQ-qualified for automotive applications. A comprehensive set of STMicroelectronics design aids, including SPICE, IBIS models, and simulation tools, is available to make adding to a design-in easy.

STPSC30G12 Silicon Carbide Power Schottky Diodes

STMicroelectronics STPSC30G12 Silicon Carbide Power Schottky Diodes are in a DO-247 package with long leads. The STMicroelectronics STPSC30G12 is an ultrahigh performance power Schottky rectifier manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 1200V rating. Thanks to the Schottky construction, no recovery is shown during turn-off, and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.