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STP100N10F7

Name: STMicroelectronics STP100N10F7
Brand: STMicroelectronics
SKU: 511-STP100N10F7
Price: 4.2 CAD
Availability: InStock

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Mouser #:

511-STP100N10F7

Mfr. #:

STP100N10F7

Mfr.:

STMicroelectronics

Description:

MOSFETs N-Ch 100V 0.0068mOhm 80A STripFETVII 150

Complete Your Design

Datasheet:

STP100N10F7 Datasheet (PDF)

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Learn more about STMicroelectronics STP100N10F7

In Stock: 169

Stock:: 169

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On Order:: 1,000

Expected 2026-06-08
Factory Lead-Time:: 26

Weeks Estimated factory production time for quantities greater than shown.

Long lead time reported on this product.

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Pricing (CAD)

Qty.	Unit Price	Ext. Price
	$4.20	$4.20
	$2.08	$20.80
	$1.95	$195.00
	$1.64	$820.00
	$1.37	$1,370.00
	$1.28	$2,560.00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	Through Hole
Package / Case:	TO-220-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	100 V
Id - Continuous Drain Current:	80 A
Rds On - Drain-Source Resistance:	8 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	4 V
Qg - Gate Charge:	56 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	150 W
Channel Mode:	Enhancement
Tradename:	STripFET
Packaging:	Tube
Brand:	STMicroelectronics
Configuration:	Single
Fall Time:	16 ns
Product Type:	MOSFETs
Rise Time:	40 ns
Series:	STP100N10F7
Factory Pack Quantity:	1000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	46 ns
Typical Turn-On Delay Time:	27 ns
Unit Weight:	2 g

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Datasheet

STP100N10F7 Datasheet (PDF)

PCN

CAHTS:: 8541290000
CNHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
TARIC:: 8541210000
MXHTS:: 85412101
ECCN:: EAR99

STripFET Power MOSFETs

STMIcroelectronics STripFET™ Power MOSFETs are enhancement-mode MOSFETs that benefit from the latest refinement of the STMicroelectronics proprietary STripFET technology with a new gate structure. The resulting STripFET Power MOSFET exhibits the high current and low R_DS(on) required by automotive and industrial switching applications such as motor control, uninterruptible power supplies (UPS), DC/DC converters, induction heater vaporizers, and solar. STMicroelectronics STripFET Power MOSFETs have a very low switching gate charge, high avalanche ruggedness, low gate drive power losses, and high power density.

STripFET™ F7 Power MOSFETs

STMicroelectronics STripFET F7 MOSFETs feature an enhanced trench-gate structure with faster and more efficient switching for simplified designs and reduced equipment size and cost. Low on-state resistance combined with low switching losses lower on-state resistance while reducing internal capacitances and gate charge. They are ideal for synchronous rectification and have an optimal capacitance Crss/Ciss ratio for lowest EMI. STMicroelectronics STripFET F7 feature high avalanche ruggedness.

Latest Technologies in Power MOSFET & IGBT

STMicroelectronics offers the newest technologies in Power MOSFETs and IGBTs. ST offers a wide portfolio of MOSFETs and IGBTs tailored to specific applications, targeting SMPS, lighting, motor control, and varied industrial applications. ST's portfolio includes high-voltage super-junction MOSFETs, trench-gate field-stop IGBTs for hard and soft switched topologies, and low-voltage trench-based MOSFETs for power conversion and BLDC motor drives. ST's 1200V SiC MOSFETs combine a high junction temperature rating of 200°C with a very low R_DS(on) area (with minimal variation versus temperature) and excellent switching performance for more efficient and compact SMPS designs. M series IGBTs offer an optimized VCE(SAT) and E(off) tradeoff along with a rugged short circuit rating for motor control. Explore ST's complete offering of MOSFETs and IGBTs for any power design.