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STH3N150-2

Name: STMicroelectronics STH3N150-2
Brand: STMicroelectronics
SKU: 511-STH3N150-2
Price: 8.52 CAD
Availability: InStock

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Mouser #:

511-STH3N150-2

Mfr. #:

STH3N150-2

Mfr.:

STMicroelectronics

Description:

MOSFETs N-CH 1500V 6Ohm 2.5A PowerMESH

Complete Your Design

Datasheet:

STH3N150-2 Datasheet (PDF)

ECAD Model:

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Learn more about STMicroelectronics STH3N150-2

In Stock: 815

Stock:: 815

Can Ship Immediately

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On Order:: 1,000

Expected 2026-04-13
Factory Lead-Time:: 13

Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Est. Tariff:

Packaging:

Full Reel (Order in multiples of 1000)

Cut Tape

MouseReel™ (+$8.50)

Pricing (CAD)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	$8.52	$8.52
	$6.09	$60.90
	$4.47	$447.00
	$4.42	$2,210.00
Full Reel (Order in multiples of 1000)
	$3.59	$3,590.00
10,000	Quote

† $8.50 MouseReel™ fee will be added and calculated in your shopping cart. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package / Case:	H2PAK-2
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	1.5 kV
Id - Continuous Drain Current:	2.5 A
Rds On - Drain-Source Resistance:	9 Ohms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	3 V
Qg - Gate Charge:	29.3 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	140 W
Channel Mode:	Enhancement
Tradename:	PowerMESH
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	STMicroelectronics
Configuration:	Single
Fall Time:	61 ns
Forward Transconductance - Min:	2.6 S
Product Type:	MOSFETs
Rise Time:	47 ns
Series:	STH3N150-2
Factory Pack Quantity:	1000
Subcategory:	Transistors
Transistor Type:	1 N-Channel Power MOSFET
Typical Turn-Off Delay Time:	45 ns
Typical Turn-On Delay Time:	24 ns
Unit Weight:	4 g

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Datasheet

STH3N150-2 Datasheet (PDF)

PCN

CAHTS:: 8541290000
CNHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
KRHTS:: 8541299000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

N-Channel PowerMESH Power MOSFETs

STMicroelectronics N-Channel PowerMESH Power MOSFETs are designed with the STMicroelectronics consolidated strip-layout based MESH OVERLAY™ process. This process results in an advanced family of high voltage Power MOSFETs with outstanding performances. The strengthened layout coupled with the proprietary edge termination structure, gives the lowest R_DS(on) per area, unrivaled gate charge, and switching characteristics.