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STDRIVEG212QTR

Name: STMicroelectronics STDRIVEG212QTR
Brand: STMicroelectronics
SKU: 511-STDRIVEG212QTR
Price: 5.98 CAD
Availability: InStock

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Mouser #:

511-STDRIVEG212QTR

Mfr. #:

STDRIVEG212QTR

Mfr.:

STMicroelectronics

Description:

Gate Drivers High voltage and high-speed half-bridge gate driver for GaN power switches

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Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

STDRIVEG212QTR Datasheet (PDF)

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Learn more about STMicroelectronics STDRIVEG212QTR

In Stock: 613

Stock:: 613 Can Ship Immediately

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Pricing (CAD)

Qty.	Unit Price	Ext. Price
	$5.98	$5.98
	$3.97	$39.70
	$3.61	$90.25
	$3.07	$307.00
	$2.91	$727.50
	$2.62	$1,310.00
	$2.45	$2,450.00
Full Reel (Order in multiples of 3000)
	$2.06	$6,180.00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	Gate Drivers
Product:	Gate Driver
Type:	Half-Bridge
Mounting Style:	SMD/SMT
Package / Case:	QFN-18
Number of Drivers:	2 Driver
Number of Outputs:	3 Output
Output Current:	1.8 A
Supply Voltage - Min:	10.3 V
Supply Voltage - Max:	18 V
Configuration:	Inverting, Non-Inverting
Rise Time:	22 ns
Fall Time:	13 ns
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 125 C
Packaging:	Reel
Packaging:	Cut Tape
Brand:	STMicroelectronics
Development Kit:	EVLSTDRIVEG212
Maximum Turn-Off Delay Time:	65 ns
Maximum Turn-On Delay Time:	65 ns
Moisture Sensitive:	Yes
Operating Supply Current:	900 uA
Output Voltage:	220 V
Product Type:	Gate Drivers
Propagation Delay - Max:	65 ns
Rds On - Drain-Source Resistance:	4.8 Ohms
Shutdown:	Shutdown
Factory Pack Quantity:	3000
Subcategory:	PMIC - Power Management ICs
Technology:	GaN
Tradename:	STDRIVE

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Datasheet

STDRIVEG212QTR Datasheet (PDF)

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USHTS:: 8542390090
MXHTS:: 8542399999
ECCN:: EAR99

STDRIVEG212 220V Half-Bridge Gate Driver

STMicroelectronics STDRIVEG212 220V High-Speed Half-Bridge Gate Driver is optimized for 5V driving enhanced-mode GaN HEMTs. The high-side driver section is designed to support a voltage rail of up to 220V and can be easily supplied by the integrated bootstrap diode. High-current capability, short propagation delay with excellent delay matching, and integrated LDOs make the STDRIVEG212 optimized for driving high-speed GaN.