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SGT080R70ILB

Name: STMicroelectronics SGT080R70ILB
Brand: STMicroelectronics
SKU: 511-SGT080R70ILB
Price: 7.72 CAD
Availability: OutOfStock

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Mouser #:

511-SGT080R70ILB

Mfr. #:

SGT080R70ILB

Mfr.:

STMicroelectronics

Description:

GaN FETs 700 V, 60 mOhm typ., 29 A, e-mode PowerGaN transistor

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Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

SGT080R70ILB Datasheet (PDF)

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Availability

Stock:: 0

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On Order:: 1,000

Expected 2026-06-08

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Unit Price:

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Ext. Price:

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Est. Tariff:

Packaging:

Full Reel (Order in multiples of 3000)

Cut Tape

MouseReel™ (+$8.50)

Pricing (CAD)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	$7.72	$7.72
	$5.43	$54.30
	$4.68	$468.00
	$4.54	$2,270.00
	$4.42	$4,420.00
Full Reel (Order in multiples of 3000)
	$4.26	$12,780.00
24,000	Quote

† $8.50 MouseReel™ fee will be added and calculated in your shopping cart. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	GaN FETs
RoHS:
Mounting Style:	SMD/SMT
Package / Case:	PowerFLAT-8
Vds - Drain-Source Breakdown Voltage:	700 V
Id - Continuous Drain Current:	29 A
Rds On - Drain-Source Resistance:	80 mOhms
Vgs - Gate-Source Voltage:	- 6 V, + 7 V
Vgs th - Gate-Source Threshold Voltage:	2.5 V
Qg - Gate Charge:	6.2 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	188 W
Channel Mode:	Enhancement
Brand:	STMicroelectronics
Configuration:	Single
Fall Time:	4 ns
Moisture Sensitive:	Yes
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Product:	FET
Product Type:	GaN FETs
Rise Time:	4 ns
Series:	SGT
Factory Pack Quantity:	3000
Subcategory:	Transistors
Technology:	GaN
Type:	PowerGaN Transistor
Typical Turn-Off Delay Time:	5 ns
Typical Turn-On Delay Time:	3 ns
Unit Weight:	154 mg

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Datasheet

SGT080R70ILB Datasheet (PDF)

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Product Change Notification 2025-11-26 (PDF)

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CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

SGT080R70ILB E-Mode PowerGaN Transistor

STMicroelectronics SGT080R70ILB E-Mode PowerGaN Transistor is an enhancement-mode transistor designed for high-efficiency power conversion applications. Featuring a drain-source voltage rating of 700V and a typical on-resistance of just 80mΩ, the STMicroelectronics SGT080R70ILB leverages the superior switching performance of Gallium Nitride (GaN) technology to minimize conduction and switching losses. Housed in a compact PowerFLAT 8x8 HV package, the transistor supports high-frequency operation and is ideal for use in resonant converters, power factor correction (PFC) stages, and DC-DC converters. A low gate charge and output capacitance enable faster transitions and reduced energy dissipation, making the SGT080R70ILB well-suited for demanding applications in consumer electronics, industrial systems, and data centers.