SCT018W65G3AG

STMicroelectronics
511-SCT018W65G3AG
SCT018W65G3AG

Mfr.:

Description:
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A
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Lifecycle:
New Product:
New from this manufacturer.
Datasheet:
ECAD Model:
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Availability

Stock:
Non-Stocked
Factory Lead-Time:
17 Weeks Estimated factory production time.
Minimum: 600   Multiples: 600
Unit Price:
$-.--
Ext. Price:
$-.--
Est. Tariff:
This Product Ships FREE

Pricing (CAD)

Qty. Unit Price
Ext. Price
$16.32 $9,792.00

Product Attribute Attribute Value Select Attribute
STMicroelectronics
Product Category: SiC MOSFETs
RoHS:  
Through Hole
HiP247-3
N-Channel
1 Channel
650 V
55 A
27 mOhms
-10 V, 22 V
4.2 V
76 nC
- 55 C
+ 200 C
398 W
Enhancement
Brand: STMicroelectronics
Configuration: Single
Fall Time: 17 ns
Packaging: Tube
Product: SiC MOSFETS
Product Type: SiC MOSFETS
Rise Time: 8 ns
Factory Pack Quantity: 600
Subcategory: Transistors
Technology: SiC
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 36 ns
Typical Turn-On Delay Time: 17 ns
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Attributes selected: 0

Datasheet

PCN

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CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99

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