MASTERGAN4

STMicroelectronics
511-MASTERGAN4
MASTERGAN4

Mfr.:

Description:
Gate Drivers High power density 600V half-bridge driver with two enhancement mode GaN HEMTs

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In Stock: 115

Stock:
115 Can Ship Immediately
Factory Lead-Time:
26 Weeks Estimated factory production time for quantities greater than shown.
Quantities greater than 115 will be subject to minimum order requirements.
Minimum: 1   Multiples: 1
Unit Price:
$-.--
Ext. Price:
$-.--
Est. Tariff:

Pricing (CAD)

Qty. Unit Price
Ext. Price
$17.64 $17.64
$13.58 $135.80
$12.69 $317.25
$11.52 $1,152.00
$10.99 $2,747.50
$10.56 $5,280.00
$9.75 $9,750.00
2,500 Quote

Product Attribute Attribute Value Select Attribute
STMicroelectronics
Product Category: Gate Drivers
RoHS:  
Half-Bridge Drivers
Half-Bridge
SMD/SMT
QFN-31
2 Driver
3 Output
6.5 A
3.3 V
15 V
- 40 C
+ 125 C
MASTERGAN
Tray
Brand: STMicroelectronics
Features: 600 V System-in-Package Integrating Half-Bridge Gate Driver
Input Voltage - Max: 15 V
Input Voltage - Min: 3.3 V
Moisture Sensitive: Yes
Product Type: Gate Drivers
Rds On - Drain-Source Resistance: 225 mOhms
Factory Pack Quantity: 1560
Subcategory: PMIC - Power Management ICs
Unit Weight: 150 mg
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Attributes selected: 0

CAHTS:
8542390000
CNHTS:
8542399000
USHTS:
8542390090
MXHTS:
8542399999
ECCN:
EAR99

MASTERGAN GaN Half-Bridge High Voltage Drivers

STMicroelectronics MASTERGAN GaN Half-Bridge High Voltage Drivers implement a high-power-density power supply with the integration of both a gate driver and two enhancement-mode GaN transistors in a half-bridge configuration. The integrated power GaNs feature an RDS(ON) of 150mΩ and a 650V drain-source breakdown voltage. The integrated bootstrap diode can quickly supply the high side of the embedded gate driver.