EVSTDRIVEG600DM

STMicroelectronics
511-EVSTDRIVEG600DM
EVSTDRIVEG600DM

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Description:
Power Management IC Development Tools Demonstration board for STDRIVEG600 600V half-bridge high-speed gate driver
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Datasheet:
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Learn more about STMicroelectronics EVSTDRIVEG600DM

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Product Attribute Attribute Value Select Attribute
STMicroelectronics
Product Category: Power Management IC Development Tools
RoHS:  
Demonstration Boards
Gate Driver
4.75 V to 20 V
STDRIVEG600
Brand: STMicroelectronics
Packaging: Bulk
Product Type: Power Management IC Development Tools
Factory Pack Quantity: 1
Subcategory: Development Tools
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Datasheet

USHTS:
9030890100
TARIC:
8473302000
ECCN:
EAR99

EVSTDRIVEG600DM Demonstration Board

STMicroelectronics EVSTDRIVEG600DM Demonstration Board provides a Half-Bridge topology reference design pairing the STDRIVEG600 Gate Driver with an MDmesh™ DM2 Power MOSFET. The STDRIVEG600 is a single-chip half-bridge gate driver for GaN (Gallium Nitride) eHEMTs (Enhancement-mode High-Electron-Mobility Transistors) or N-channel power MOSFETs. The high side of the STDRIVEG600 is designed to withstand voltages up to 600V and is suitable for designs with bus voltage up to 500V.  

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