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EVSTDRIVEG600DM

Name: STMicroelectronics EVSTDRIVEG600DM
Brand: STMicroelectronics
SKU: 511-EVSTDRIVEG600DM
Price: 119.04 CAD
Availability: OutOfStock

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Mouser #:

511-EVSTDRIVEG600DM

Mfr. #:

EVSTDRIVEG600DM

Mfr.:

STMicroelectronics

Description:

Power Management IC Development Tools Demonstration board for STDRIVEG600 600V half-bridge high-speed gate driver

Complete Your Design

Datasheet:

EVSTDRIVEG600DM Datasheet (PDF)

More Information

Learn more about STMicroelectronics EVSTDRIVEG600DM

Availability

Stock:: Non-Stocked

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Factory Lead-Time:: 52 Weeks Estimated factory production time.

Long lead time reported on this product.

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Unit Price:

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Ext. Price:

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Est. Tariff:

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Pricing (CAD)

Qty.	Unit Price	Ext. Price
	$119.04	$119.04

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	Power Management IC Development Tools
RoHS:
Product:	Demonstration Boards
Type:	Gate Driver
Input Voltage:	4.75 V to 20 V
Tool Is For Evaluation Of:	STDRIVEG600
Brand:	STMicroelectronics
Packaging:	Bulk
Product Type:	Power Management IC Development Tools
Factory Pack Quantity:	1
Subcategory:	Development Tools

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Datasheet

EVSTDRIVEG600DM Datasheet (PDF)

Compliance Codes

USHTS:: 9030890100
TARIC:: 8473302000
ECCN:: EAR99

Origin Classifications

Country of Origin:: Italy
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

EVSTDRIVEG600DM Demonstration Board

STMicroelectronics EVSTDRIVEG600DM Demonstration Board provides a Half-Bridge topology reference design pairing the STDRIVEG600 Gate Driver with an MDmesh™ DM2 Power MOSFET. The STDRIVEG600 is a single-chip half-bridge gate driver for GaN (Gallium Nitride) eHEMTs (Enhancement-mode High-Electron-Mobility Transistors) or N-channel power MOSFETs. The high side of the STDRIVEG600 is designed to withstand voltages up to 600V and is suitable for designs with bus voltage up to 500V.