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TGS2352-2-SM

Name: Qorvo TGS2352-2-SM
Brand: Qorvo
SKU: 772-TGS2352-2-SM
Price: 282.92 CAD
Availability: InStock

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Mouser #:

772-TGS2352-2-SM

Mfr. #:

TGS2352-2-SM

Mfr.:

Qorvo

Description:

RF Switch ICs .5-12GHz SPDT GaN IL < 1dB

Datasheet:

TGS2352-2-SM Datasheet (PDF)

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In Stock: 94

Stock:: 94 Can Ship Immediately

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Factory Lead-Time:: 12 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (CAD)

Qty.	Unit Price	Ext. Price
	$282.92	$282.92
	$212.38	$5,309.50
100	Quote

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Qorvo
Product Category:	RF Switch ICs
RoHS:
Switch Configuration:	SPDT
Minimum Frequency:	500 MHz
Maximum Frequency:	12 GHz
Insertion Loss:	1 dB
Off Isolation - Typ:	35 dB
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 85 C
Mounting Style:	SMD/SMT
Package / Case:	QFN-22
Technology:	Si
Series:	TGS2352
Packaging:	Waffle
Brand:	Qorvo
High Control Voltage:	0 V
Moisture Sensitive:	Yes
Number of Switches:	Single
Off Time - Max:	18 ns
On Time - Max:	31 ns
Pd - Power Dissipation:	5 W
Product Type:	RF Switch ICs
Factory Pack Quantity:	50
Subcategory:	Wireless & RF Integrated Circuits
Part # Aliases:	TGS2352 1075674
Unit Weight:	9.245 g

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Datasheet

TGS2352-2-SM Datasheet (PDF)

PCN

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CAHTS:: 8542330000
CNHTS:: 8542399000
USHTS:: 8542330001
JPHTS:: 8542330996
KRHTS:: 8532331000
MXHTS:: 8542330201
ECCN:: EAR99

GaN Solutions

Qorvo is your smart RF partner for building solutions using Gallium Nitride (GaN) technology. No longer a technology just for defense and aerospace applications, GaN is enabling higher and higher frequencies in more complex applications, such as phased arrays, radar, base transceiver stations for 5G, cable TV (CATV), VSAT, and defense communications. Qorvo provides proven, record-setting GaN circuit reliability and compact, high-efficiency products. This paves the way for more robust performance, lower operating costs and longer operational lifetimes.

GaN Switches

Qorvo Gallium Nitride (GaN) Switches are suited for RF Switching applications and feature high breakdown voltages combined with the low on-resistance and off-state capacitance. This enables a dramatic increases in power handling. GaAs FET switches are widely used in the RF industry, and typically used for power levels on the order of a few watts or less. GaN FETs are able to use the same circuit architectures to handle power levels on the order of tens of watts.