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CM600DX-24T#110G

Name: Mitsubishi Electric CM600DX-24T#110G
Brand: Mitsubishi Electric
SKU: 917-CM600DX-24T
Price: 292.24 CAD
Availability: InStock

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Mouser #:

917-CM600DX-24T

Mfr. #:

CM600DX-24T#110G

Mfr.:

Mitsubishi Electric

Description:

IGBT Modules IGBT MODULE T-SERIES NX TYPE DUAL

Datasheet:

CM600DX-24T#110G Datasheet

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In Stock: 99

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Factory Lead-Time:: 40 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (CAD)

Qty.	Unit Price	Ext. Price
	$292.24	$292.24
	$249.07	$2,988.84
108	Quote

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Mitsubishi Electric
Product Category:	IGBT Modules
RoHS:
Product:	IGBT Modules
Configuration:	Dual
Collector- Emitter Voltage VCEO Max:	1.2 kV
Collector-Emitter Saturation Voltage:	1.65 V
Continuous Collector Current at 25 C:	600 A
Gate-Emitter Leakage Current:	500 nA
Pd - Power Dissipation:	3.125 kW
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 150 C
Brand:	Mitsubishi Electric
Maximum Gate Emitter Voltage:	20 V
Mounting Style:	Screw Mount
Product Type:	IGBT Modules
Factory Pack Quantity:	12
Subcategory:	IGBTs
Technology:	Si

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Datasheet

CM600DX-24T#110G Datasheet

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CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

T/T-1 Industrial IGBT Modules

Mitsubishi Electric T/T-1 Industrial Insulated Gate Bipolar Transistor (IGBT) Modules are equipped with a three-phase converter, inverter, and brake circuit (CIB), simplifying the design for inverter systems. The CIB modules reduce package size by 36% compared to the existing module. The T/T-1 series utilizes a 7th-generation IGBT produced using CSTBT™ and a diode while incorporating a relaxed field of cathode (RFC) structure. The construction eliminates the solder-attached section, increasing the thermal cycle lifetime. Mitsubishi Electric T/T-1 Industrial IGBT Modules improve the reliability of inverters, reduce power loss, and simplify the assembly process.

Industrial IGBT Modules

Mitsubishi Electric Industrial Insulated Gate Bipolar Transistor (IGBT) Modules incorporate a three-phase converter, inverter, and brake circuit (CIB) into a single package. These IGBTs offer a chip structure that evolved from a flat planar structure to a trench gate structure. The CSTBT™ technology enables low loss and a smaller size for industrial equipment. The industrial IGBT module lineup from Mitsubishi Electric features 5th-generation composite products with a thin profile (NX type) in addition to the former external shape (standard type), as well as 6th-generation S series, and the 7th-generation T/T1 series, with low power loss and a smaller size.