MSCSM120DAM31CTBL1NG

Microchip Technology
579-M120DAM31CTBL1NG
MSCSM120DAM31CTBL1NG

Mfr.:

Description:
Discrete Semiconductor Modules PM-MOSFET-SIC-SBD-BL1

Datasheet:
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In Stock: 11

Stock:
11 Can Ship Immediately
Factory Lead-Time:
18 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
$-.--
Ext. Price:
$-.--
Est. Tariff:
This Product Ships FREE

Pricing (CAD)

Qty. Unit Price
Ext. Price
$131.67 $131.67
$131.66 $1,316.60
250 Quote

Product Attribute Attribute Value Select Attribute
Microchip
Product Category: Discrete Semiconductor Modules
MOSFET-SiC SBD Modules
MOSFET / SiC SBD
SiC
1.5 V
1.2 kV
- 10 V, + 25 V
Screw Mount
- 55 C
+ 175 C
Brand: Microchip Technology
Configuration: Boost Chopper
Fall Time: 25 ns
Id - Continuous Drain Current: 79 A
Pd - Power Dissipation: 310 W
Product Type: Discrete Semiconductor Modules
Rds On - Drain-Source Resistance: 31 mOhms
Rise Time: 30 ns
Factory Pack Quantity: 1
Subcategory: Discrete Semiconductor Modules
Transistor Polarity: N-Channel
Typical Turn-Off Delay Time: 50 ns
Typical Turn-On Delay Time: 30 ns
Vds - Drain-Source Breakdown Voltage: 1.2 kV
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Attributes selected: 0

Datasheet

PCN

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CNHTS:
8541290000
USHTS:
8541290065
ECCN:
EAR99

MSCSM120x MOSFET Power Modules

Microchip Technology MSCSM120x MOSFET Power Modules are high-efficiency converters that feature Si3N4 substrate with thick copper for improved thermal performance. These modules offer a low profile, direct mounting to the heatsink (isolated package), an internal thermistor for temperature monitoring, and an extended temperature range. The MSCSM120x modules operate at 1.2kV reverse voltage (VR), -10V to 25V gate-source voltage range (VGS), 310W/560W power dissipation (PD), and 79A/150A continuous drain current (ID). These modules are used in applications such as high-reliability power systems, high-efficiency AC/DC and DC/AC converters, motor control, and AC switches.

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