MSC025SMA120J

Microchip Technology
494-MSC025SMA120J
MSC025SMA120J

Mfr.:

Description:
MOSFET Modules MOSFET SIC 1200 V 25 mOhm SOT-227
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Datasheet:
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In Stock: 81

Stock:
81 Can Ship Immediately
Factory Lead-Time:
8 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
$-.--
Ext. Price:
$-.--
Est. Tariff:

Pricing (CAD)

Qty. Unit Price
Ext. Price
$88.63 $88.63
$81.73 $2,451.90
$71.11 $7,111.00

Product Attribute Attribute Value Select Attribute
Microchip
Product Category: MOSFET Modules
RoHS:  
SiC
Screw Mount
SOT-227-4
N-Channel
1.2 kV
84 A
31 mOhms
- 10 V, + 25 V
5 V
- 55 C
+ 175 C
321 W
Tube
Brand: Microchip Technology
Fall Time: 17 ns
Product: SiC MOSFET Modules
Product Type: MOSFET Modules
Rise Time: 21 ns
Factory Pack Quantity: 10
Subcategory: Discrete and Power Modules
Type: Power MOSFET
Typical Turn-Off Delay Time: 41 ns
Typical Turn-On Delay Time: 33 ns
Unit Weight: 63.294 g
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CAHTS:
8541290000
CNHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99

Silicon Carbide (SiC) Semiconductors

Microchip Technology Silicon Carbide (SiC) Semiconductors are an innovative option for power electronic designers looking to improve system efficiency, smaller form factor, and higher operating temperature in products covering industrial, medical, military/aerospace, aviation, and communication market segments. Microchip's next-generation SiC MOSFETs and SiC Schottky Barrier Diodes (SBDs) are designed with high repetitive Unclamped Inductive Switching (UIS) capability, and its SiC MOSFETs maintain high UIS capability at approximately 10J/cm2 to 15J/cm2 and robust short-circuit protection at 3ms to 5ms. The Microchip Technology SiC SBDs are designed with balanced surge current, forward voltage, thermal resistance, and thermal capacitance ratings at low reverse currents for lower switching loss. In addition, SiC MOSFET and SiC SBD can be paired together for use in modules.

Silicon Carbide (SiC) MOSFETs

Microchip Technology Silicon Carbide (SiC) MOSFETs offer superior dynamic and thermal performance over conventional Silicon (Si) power MOSFETs. These MOSFETs have low capacitances, low gate charge, fast switching speed, and good avalanche ruggedness. The SiC MOSFETs can stabilize operation at 175°C high junction temperature. These MOSFETs provide high efficiency with low switching losses. The SiC MOSFETs do not require any freewheeling diodes. Typical applications include smart grid transmission and distribution, induction heating and welding, and power supply and distribution.

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