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LSIC2SD065D08A

Name: Littelfuse LSIC2SD065D08A
Brand: Littelfuse
SKU: 576-LSIC2SD065D08A
Price: 3.85 CAD
Availability: OutOfStock

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Mouser #:

576-LSIC2SD065D08A

Mfr. #:

LSIC2SD065D08A

Mfr.:

Littelfuse

Description:

SiC Schottky Diodes 650V/8A SiC SBD?TO263-2LAEC-Q101

Datasheet:

LSIC2SD065D08A Datasheet

ECAD Model:

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Availability

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Minimum: 800 Multiples: 800

Unit Price:

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Ext. Price:

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Est. Tariff:

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Pricing (CAD)

Qty.	Unit Price	Ext. Price
	$3.85	$3,080.00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Littelfuse
Product Category:	SiC Schottky Diodes
RoHS:
Mounting Style:	SMD/SMT
Package / Case:	D2PAK-2 (TO-263-2)
Configuration:	Single
If - Forward Current:	8 A
Vrrm - Repetitive Reverse Voltage:	650 V
Vf - Forward Voltage:	1.8 V
Ifsm - Forward Surge Current:	40 A
Ir - Reverse Current:	100 uA
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Series:	LSIC2SD
Qualification:	AEC-Q101
Brand:	Littelfuse
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	KR
Product Type:	SiC Schottky Diodes
Factory Pack Quantity:	800
Subcategory:	Diodes & Rectifiers

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Datasheet

LSIC2SD065D08A Datasheet

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Product Catalog (PDF)

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USHTS:: 8541100080
ECCN:: EAR99

SiC MOSFETs

Littelfuse SiC MOSFETs are optimized for high-frequency, high-efficiency applications. These robust SiC MOSFETs offer low gate charges, low output capacitance, and low gate resistance for high-frequency switching. These devices also feature extremely low drain-source on-state resistance. The low gate charge and on-resistance of these MOSFETs translate into lower conduction and switching losses, respectively. Littelfuse offers in-house designed, developed, and manufactured SiC MOSFETs with extremely low gate charge and output capacitance, industry-leading performance, and ruggedness at all temperatures. Littelfuse SiC MOSFETs are available in a range of varieties, including 1200V in 80mΩ, 120mΩ, and 160mΩ versions.

LSIC2SD GEN2 SiC Schottky Diodes

Littelfuse LSIC2SD GEN2 Silicon Carbide (SiC) Schottky Diodes provide improved efficiency, reliability, and thermal management in various applications. The diodes have an operating junction temperature of +175°C maximum. The positive temperature coefficient of the diodes supports safe operation and ease of paralleling. Other features of the Littelfuse LSIC2SD GEN2 SiC Schottky Diodes include high-surge capability and negligible reverse recovery current. The switching behavior of the diodes is extremely fast and temperature-independent. Compared to Si bipolar diodes, these diodes provide dramatically reduced switching losses. LSIC2SD GEN2 SiC Schottky Diodes are ideal for EV charging stations, solar inverters, switch-mode power supplies, and more. These diodes are available in a variety of packages and voltage/current ratings, including 650V (6A to 40A) and 1200V (5A to 40A).