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IPT009N06NM5ATMA1

Name: Infineon IPT009N06NM5ATMA1
Brand: Infineon Technologies
SKU: 726-IPT009N06NM5ATMA
Price: 8.87 CAD
Availability: InStock

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Mouser #:

726-IPT009N06NM5ATMA

Mfr. #:

IPT009N06NM5ATMA1

Mfr.:

Infineon Technologies

Description:

MOSFETs IFX FET 60V

Datasheet:

IPT009N06NM5ATMA1 Datasheet (PDF)

ECAD Model:

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Learn more about Infineon Technologies IPT009N06NM5ATMA1

In Stock: 1,744

Stock:: 1,744 Can Ship Immediately

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Factory Lead-Time:: 16 Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Est. Tariff:

Pricing (CAD)

Qty.	Unit Price	Ext. Price
	$8.87	$8.87
	$6.70	$67.00
	$5.43	$543.00
	$4.82	$2,410.00
	$4.12	$4,120.00
Full Reel (Order in multiples of 2000)
	$4.12	$8,240.00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package / Case:	HSOF-8
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	60 V
Id - Continuous Drain Current:	427 A
Rds On - Drain-Source Resistance:	1.2 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	2.8 V
Qg - Gate Charge:	171 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	300 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Brand:	Infineon Technologies
Configuration:	Single
Fall Time:	31 ns
Product Type:	MOSFETs
Rise Time:	27 ns
Factory Pack Quantity:	2000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	63 ns
Typical Turn-On Delay Time:	20 ns
Part # Aliases:	IPT009N06NM5 SP005727743

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Datasheet

IPT009N06NM5ATMA1 Datasheet (PDF)

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CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

OptiMOS™ 5 Power MOSFETs

Infineon OptiMOS™ 5 Power MOSFETs are designed to meet requirements for improved system efficiency while reducing system costs. These devices feature lower R_DS(on) and Figure of Merit (R_DS(on) x Q_g) compared to alternative devices. They are designed using silicon technology, optimized to meet and exceed the energy efficiency and power density requirements. Typical applications for these MOSFETs include server, datacom, and client applications in the computing industry. They can also be used in synchronous rectification in switched-mode power supplies (SMPS) and motor control, solar microinverters, and fast switching DC/DC converter applications.