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IPB027N10N3 G

Name: Infineon IPB027N10N3 G
Brand: Infineon Technologies
SKU: 726-IPB027N10N3G
Price: 7.69 CAD
Availability: InStock

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Mouser #:

726-IPB027N10N3G

Mfr. #:

IPB027N10N3 G

Mfr.:

Infineon Technologies

Description:

MOSFETs N-Ch 100V 120A D2PAK-2 OptiMOS 3

Datasheet:

IPB027N10N3 G Datasheet (PDF)

ECAD Model:

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Learn more about Infineon Technologies IPB027N10N3 G

In Stock: 5,063

Stock:: 5,063 Can Ship Immediately

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Factory Lead-Time:: 8 Weeks Estimated factory production time for quantities greater than shown.

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Unit Price:

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Ext. Price:

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Packaging:

Full Reel (Order in multiples of 1000)

Cut Tape

MouseReel™ (+$8.50)

Pricing (CAD)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	$7.69	$7.69
	$5.63	$56.30
	$4.56	$456.00
	$4.05	$2,025.00
Full Reel (Order in multiples of 1000)
	$3.44	$3,440.00
25,000	Quote

† $8.50 MouseReel™ fee will be added and calculated in your shopping cart. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Alternative Packaging

Mfr. Part #:

IPB027N10N3GATMA1

Packaging:

Reel, Cut Tape, MouseReel

Availability:

In Stock

Price:

$6.43

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package / Case:	D2PAK-3 (TO-263-3)
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	100 V
Id - Continuous Drain Current:	120 A
Rds On - Drain-Source Resistance:	2.3 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	2 V
Qg - Gate Charge:	206 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	300 W
Channel Mode:	Enhancement
Tradename:	OptiMOS
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Infineon Technologies
Configuration:	Single
Fall Time:	28 ns
Forward Transconductance - Min:	94 S
Product Type:	MOSFETs
Rise Time:	58 ns
Series:	OptiMOS 3
Factory Pack Quantity:	1000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	84 ns
Typical Turn-On Delay Time:	34 ns
Part # Aliases:	IPB27N1N3GXT SP000506508 IPB027N10N3GATMA1
Unit Weight:	4 g

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Datasheet

IPB027N10N3 G Datasheet (PDF)

Models

IPB027N10N3 G Symbol & Footprint by SnapMagic

Product Catalogs

CAHTS:: 8541290000
CNHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
TARIC:: 8541290000
MXHTS:: 85412999
ECCN:: EAR99

Designing Power Systems

Infineon Power MOSFETs are designed to bring more efficiency and power density to designers' products. The full range of OptiMOS™ and StrongIRFET™ N-channel Power MOSFETs enable innovation and performance in applications such as switch mode power supplies (SMPS), motor control and drives, inverters, and computing. The OptiMOS™ and StrongIRFET™ families cover the 20V to 300V range of Power MOSFET products. Infineon offers the OptiMOS™ and StrongIRFET™ product families. These are two highly innovative families that consistently meet the highest quality and performance demands in key specifications for power system design. OptiMOS™ is the market leader in highly efficient solutions for power generation, power supply, and power consumption.

N-Channel OptiMOS™ Power MOSFETs

Infineon N-Channel OptiMOS™ Power MOSFETs are class-leading power MOSFETs for the highest power density and energy-efficient solutions. Ultra-low gate and output charges, together with the lowest on-state resistance in small footprint packages, make ideal choices for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Superfast switching Control FETs, together with low EMI Sync FETs, provide solutions that are easy to design. Infineon N-Channel OptiMOS™ Power MOSFETs provide excellent gate charge and are optimized for DC-DC conversion.

Infineon Automatic Opening Systems

Infineon Automatic Opening Systems incorporate smart sensors, motor controls, supplies and battery management to automate sliding, swing or garage doors, sun blinds, and gates. When automated, these doors manage opening actions, avoid unintentional opening, control speed and torque, detect objects along paths, as well as perform other functions.

Infineon OptiMOS™ 3

Infineon's OptiMOS™ 3 40V, 60V, and 80V families reduce power losses up to 30% in a given standard TO package. The low switching losses and on-state resistance of the devices enable an increase in power densities by up to 30% and a reduction in part count for a given application by more than 25%, compared to competitive solutions. The OptiMOS™ 3 devices offer best-in-class RDS(on), achieving an RDS(on) as low as 1.6mΩ for 40V products in SuperSO8™ packages, 3.5mΩ for 60V products in D-PAK packages, and 2.5mΩ for 80V products in D2-PAK packages. The MOSFETs are ideal for a variety of power conversion and management applications, including SMPSs, DC/DC converters, and DC motor drives.