FS150R12N2T7B15BPSA1

Infineon Technologies
726-FS150R12N2T7B15B
FS150R12N2T7B15BPSA1

Mfr.:

Description:
IGBT Modules LOW POWER ECONO

Datasheet:
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Learn more about Infineon Technologies FS150R12N2T7B15BPSA1

In Stock: 16

Stock:
16 Can Ship Immediately
Factory Lead-Time:
12 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
$-.--
Ext. Price:
$-.--
Est. Tariff:
This Product Ships FREE

Pricing (CAD)

Qty. Unit Price
Ext. Price
$106.83 $106.83

Product Attribute Attribute Value Select Attribute
Infineon
Product Category: IGBT Modules
IGBT Silicon Modules
6-Pack
1.2 kV
1.55 V
150 A
100 nA
- 40 C
+ 175 C
Tray
Brand: Infineon Technologies
Maximum Gate Emitter Voltage: 20 V
Mounting Style: Through Hole
Product Type: IGBT Modules
Factory Pack Quantity: 15
Subcategory: IGBTs
Technology: Si
Part # Aliases: FS150R12N2T7_B15 SP005551571
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Attributes selected: 0

Datasheet

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CAHTS:
8541210000
CNHTS:
8504409100
USHTS:
8541210095
JPHTS:
854121000
TARIC:
8541210000
MXHTS:
8541210100
ECCN:
EAR99

1200V Sixpack IGBT Modules

Infineon 1200V Sixpack IGBT Modules are EasyPACK™ 1B sixpack IGBT modules with TRENCHSTOP™ IGBT7, Emitter Controlled 7 diode, and NTC technology. This technology strongly reduces losses and provides a high level of controllability. The cell concept is characterized by implementing parallel trench cells separated by sub-micron mesas compared to the formerly used square trench cells. The chip is specially optimized for industrial drive applications and solar energy systems, which means much lower static losses, higher power density, and softer switching. A significant increase in power density can be obtained by raising the allowed maximum operating temperature up to 175°C in the Infineon 1200V Sixpack IGBT Modules.

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