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BSZ024N04LS6ATMA1

Name: Infineon BSZ024N04LS6ATMA1
Brand: Infineon Technologies
SKU: 726-BSZ024N04LS6ATMA
Price: 1.72 CAD
Availability: InStock

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Mouser #:

726-BSZ024N04LS6ATMA

Mfr. #:

BSZ024N04LS6ATMA1

Mfr.:

Infineon Technologies

Description:

MOSFETs IFX FET 40V

Datasheet:

BSZ024N04LS6ATMA1 Datasheet (PDF)

ECAD Model:

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Learn more about Infineon Technologies BSZ024N04LS6ATMA1

In Stock: 257

Stock:: 257

Can Ship Immediately

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On Order:: 5,000

Expected 2026-09-17

5,000

Expected 2026-09-24
Factory Lead-Time:: 52

Weeks Estimated factory production time for quantities greater than shown.

Long lead time reported on this product.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

$-.--

Ext. Price:

$-.--

Est. Tariff:

Packaging:

Full Reel (Order in multiples of 5000)

Cut Tape

MouseReel™ (+$8.50)

Pricing (CAD)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	$1.72	$1.72
	$1.40	$14.00
	$1.21	$121.00
	$1.12	$560.00
	$1.06	$1,060.00
	$1.03	$2,575.00
Full Reel (Order in multiples of 5000)
	$0.825	$4,125.00

† $8.50 MouseReel™ fee will be added and calculated in your shopping cart. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package / Case:	TSDSON-FL-8
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	40 V
Id - Continuous Drain Current:	40 A
Rds On - Drain-Source Resistance:	2.8 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	2.3 V
Qg - Gate Charge:	25 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	75 W
Channel Mode:	Enhancement
Tradename:	OptiMOS
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Infineon Technologies
Configuration:	Single
Fall Time:	3 ns
Forward Transconductance - Min:	100 S
Product Type:	MOSFETs
Rise Time:	6 ns
Series:	BSZ0xx
Factory Pack Quantity:	5000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	17 ns
Typical Turn-On Delay Time:	7 ns
Part # Aliases:	BSZ024N04LS6 SP001687046
Unit Weight:	38.760 mg

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Datasheet

BSZ024N04LS6ATMA1 Datasheet (PDF)

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CNHTS:: 8541290000
USHTS:: 8541290065
TARIC:: 8541290000
ECCN:: EAR99

OptiMOS™ 6 Power MOSFETs

Infineon Technologies OptiMOS™ 6 Power MOSFETs offer next-generation, cutting-edge innovation and best-in-class performance. The OptiMOS 6 family utilizes thin wafer technology that enables significant performance benefits. Compared to alternative products, the OptiMOS 6 Power MOSFETs have a reduced R_DS(ON) of 30% and are optimized for synchronous rectification. These MOSFETs are available in various voltage nodes, including 40V, 100V, 120V, 135V, 150V, and 200V.