It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

See an Error?

BFR843EL3E6327XTSA1

Name: Infineon BFR843EL3E6327XTSA1
Brand: Infineon Technologies
SKU: 726-BFR843EL3E6327XT
Price: 2.12 CAD
Availability: InStock

Images are for reference only
See Product Specifications

Mouser #:

726-BFR843EL3E6327XT

Mfr. #:

BFR843EL3E6327XTSA1

Mfr.:

Infineon Technologies

Description:

RF Bipolar Transistors RF BIP TRANSISTORS

Datasheet:

BFR843EL3E6327XTSA1 Datasheet (PDF)

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about ECAD Model.

More Information

Learn more about Infineon Technologies BFR843EL3E6327XTSA1

In Stock: 15,000

Stock:: 15,000 Can Ship Immediately

An unexpected error occurred. Please try again later.
Factory Lead-Time:: 39 Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

$-.--

Ext. Price:

$-.--

Est. Tariff:

Packaging:

Full Reel (Order in multiples of 15000)

Cut Tape

MouseReel™ (+$8.50)

Pricing (CAD)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	$2.12	$2.12
	$0.625	$6.25
	$0.567	$56.70
	$0.544	$272.00
	$0.535	$535.00
	$0.533	$1,332.50
	$0.51	$2,550.00
	$0.508	$5,080.00
Full Reel (Order in multiples of 15000)
	$0.508	$7,620.00

† $8.50 MouseReel™ fee will be added and calculated in your shopping cart. All MouseReel™ orders are non-cancellable and non-returnable. ↩

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	RF Bipolar Transistors
RoHS:
Transistor Type:	Bipolar
Technology:	SiGe
Transistor Polarity:	NPN
Operating Frequency:	12 GHz
DC Collector/Base Gain hfe Min:	230
Collector- Emitter Voltage VCEO Max:	2.25 V
Continuous Collector Current:	55 mA
Mounting Style:	SMD/SMT
Package / Case:	TSLP-3
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Infineon Technologies
Pd - Power Dissipation:	125 mW
Product Type:	RF Bipolar Transistors
Factory Pack Quantity:	15000
Subcategory:	Transistors
Part # Aliases:	BFR 843EL3 E6327 SP001062610
Unit Weight:	0.470 mg

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

BFR843EL3E6327XTSA1 Datasheet (PDF)

Models

Product Catalogs

Infineon's Latest Power and Sensing Guide (PDF)

SPICE Models

Infineon-RFTransistor-SPICE.lib-SM-v02_10-EN

This functionality requires JavaScript to be enabled.

CAHTS:: 8541290000
CNHTS:: 8541210000
USHTS:: 8541210075
JPHTS:: 8541290100
KRHTS:: 8541219000
TARIC:: 8541290000
MXHTS:: 85412999
ECCN:: EAR99

RF Transistors

Infineon RF Transistors include Low Noise Amplifiers and High Linearity Transistors. Devices in the Low Noise category are based on silicon bipolar technology. Moderate transition frequency of fT <20 GHz provides ease of use and stability. Breakdown voltage can safely support supply voltage of 5V. These transistors are suitable for use with AM over VHF/UHF up to 14GHz. High Linearity Transistors provide OIP3 (Output 3rd Order Intercept Point) above 29dBm. They are based on Infineon's high volume silicon bipolar and SiGe:C technologies for best in class noise figures. These devices are ideal for drivers, pre-amplifiers, and buffer amplifiers.

RF Solutions for IoT applications

Infineon Technologies RF Solutions portfolio delivers high-performance RF technology products for reliable wireless connectivity in IoT applications. The number of IoT devices is growing at an astonishing rate. At the same time, customers expect a superior user experience in terms of product design and functionality.