IXSG40N65L2K

IXYS
747-IXSG40N65L2K
IXSG40N65L2K

Mfr.:

Description:
SiC MOSFETs SiC MOSFET in TOLL

Lifecycle:
New Product:
New from this manufacturer.
ECAD Model:
Download the free Library Loader to convert this file for your ECAD Tool. Learn more about ECAD Model.

In Stock: 76

Stock:
76
Can Ship Immediately
On Order:
2,000
Expected 2026-02-16
Factory Lead-Time:
27
Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
$-.--
Ext. Price:
$-.--
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 2000)

Pricing (CAD)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™
$11.50 $11.50
$7.80 $78.00
$5.89 $589.00
$5.58 $5,580.00
Full Reel (Order in multiples of 2000)
$4.81 $9,620.00
† $8.50 MouseReel™ fee will be added and calculated in your shopping cart. All MouseReel™ orders are non-cancellable and non-returnable.

Product Attribute Attribute Value Select Attribute
IXYS
Product Category: SiC MOSFETs
RoHS:  
SMD/SMT
TOLL-8
N-Channel
1 Channel
650 V
43 A
78 mOhms
- 5 V, 20 V
4.5 V
64 nC
- 55 C
+ 175 C
174 W
Enhancement
Brand: IXYS
Configuration: Single
Fall Time: 7.8 ns
Packaging: Reel
Packaging: Cut Tape
Packaging: MouseReel
Product: SiC MOSFETS
Product Type: SiC MOSFETS
Rise Time: 12.2 ns
Series: IXSxNxL2Kx
Factory Pack Quantity: 2000
Subcategory: Transistors
Technology: SiC
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 11.4 ns
Typical Turn-On Delay Time: 4.3 ns
Products found:
To show similar products, select at least one checkbox
Select at least one checkbox above to show similar products in this category.
Attributes selected: 0

This functionality requires JavaScript to be enabled.

CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99

IXSxNxL2Kx Silicon Carbide (SiC) MOSFETs

IXYS IXSxNxL2Kx Silicon Carbide (SiC) MOSFETs have high blocking voltage with low on-state resistance [RDS(ON)]. The on-state resistance is between 25mΩ and 160mΩ, and the continuous drain current (ID) is between 20A and 111A. These devices offer high-speed switching with low capacitance and have an ultra-fast intrinsic body diode. These are available with a 650V or 1200V drain-source voltage (VDSS) rating. The IXYS IXSxNxL2Kx Silicon Carbide (SiC) MOSFETs are offered in three packages (TO-263-7L, TOLL-8, and TO-247-4L).