DI020N06D1-AQ

Diotec Semiconductor
637-DI020N06D1-AQ
DI020N06D1-AQ

Mfr.:

Description:
MOSFETs MOSFET, DPAK, 60V, 20A, 150C, N, AEC-Q101

ECAD Model:
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In Stock: 1,799

Stock:
1,799 Can Ship Immediately
Minimum: 1   Multiples: 1
Unit Price:
$-.--
Ext. Price:
$-.--
Est. Tariff:

Pricing (CAD)

Qty. Unit Price
Ext. Price
$1.18 $1.18
$0.924 $9.24
$0.553 $55.30
$0.549 $274.50
$0.532 $532.00
Full Reel (Order in multiples of 2500)
$0.47 $1,175.00
$0.442 $2,210.00
$0.38 $3,800.00
$0.372 $9,300.00

Product Attribute Attribute Value Select Attribute
Diotec Semiconductor
Product Category: MOSFETs
RoHS:  
REACH - SVHC:
Si
SMD/SMT
DPAK-3 (TO-252-3)
N-Channel
1 Channel
60 V
20 A
34 mOhms
- 20 V, 20 V
1.2 V
19 nC
- 55 C
+ 150 C
25 W
Enhancement
AEC-Q101
Reel
Cut Tape
Brand: Diotec Semiconductor
Configuration: Single
Fall Time: 2 ns
Forward Transconductance - Min: 18 S
Product Type: MOSFETs
Rise Time: 27 ns
Series: DI0XX
Factory Pack Quantity: 2500
Subcategory: Transistors
Typical Turn-Off Delay Time: 10 ns
Typical Turn-On Delay Time: 11 ns
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Attributes selected: 0

CAHTS:
8541210000
USHTS:
8541210095
JPHTS:
854121000
TARIC:
8541210000
MXHTS:
8541210100
ECCN:
EAR99

Automotive Advanced Trench Technology MOSFETs

Diotec Semiconductor Automotive Advanced Trench Technology MOSFETs are AEC-Q101 qualified and leverage advanced trench technology, which enhances performance by providing fast switching times and low total gate charge. This results in improved efficiency and reduced power loss. The Diotec Automotive Advanced Trench Technology MOSFETs also feature low on-state resistance, which minimizes conduction losses and enhances overall system performance. These characteristics make the MOSFETs ideal for various automotive and industrial applications where reliability and efficiency are paramount.

DI020N06D1 N-Channel Power MOSFETs

Diotec Semiconductor DI020N06D1 N-Channel Power MOSFETs offer a low on-state resistance, a low gate charge (25.3nC), and fast switching times with an Avalanche rating. With a wide -55°C to +175°C operating temperature range, these components offer a 60V drain-source breakdown voltage, 20A continuous drain current, and a 24mΩ on drain-source resistance. The TO-252AA packaged DI006H03SQ MOSFETs are for DC/DC converters, power supplies, DC drives, synchronous rectifiers, and commercial/industrial-grade applications.