ALD210800APCL

Advanced Linear Devices
585-ALD210800APCL
ALD210800APCL

Mfr.:

Description:
MOSFETs PREC N-CHAN EPAD CMOS MOSFET ARRAY

Datasheet:
ECAD Model:
Download the free Library Loader to convert this file for your ECAD Tool. Learn more about ECAD Model.

Availability

Stock:
Non-Stocked
Factory Lead-Time:
4 Weeks Estimated factory production time.
Minimum: 50   Multiples: 50
Unit Price:
$-.--
Ext. Price:
$-.--
Est. Tariff:
This Product Ships FREE

Pricing (CAD)

Qty. Unit Price
Ext. Price
$9.55 $477.50
$9.24 $924.00

Product Attribute Attribute Value Select Attribute
Advanced Linear Devices
Product Category: MOSFETs
RoHS:  
Si
Through Hole
PDIP-16
N-Channel
4 Channel
10.6 V
80 mA
25 Ohms
- 12 V, 12 V
20 mV
0 C
+ 70 C
500 mW
Enhancement
Tube
Brand: Advanced Linear Devices
Configuration: Quad
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: US
Product Type: MOSFETs
Series: ALD210800A
Factory Pack Quantity: 50
Subcategory: Transistors
Transistor Type: 4 N-Channel
Typical Turn-Off Delay Time: 10 ns
Typical Turn-On Delay Time: 10 ns
Unit Weight: 1.025 g
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Attributes selected: 0

Datasheet

CAHTS:
8541210000
CNHTS:
8541210000
USHTS:
8541210095
JPHTS:
8541210101
KRHTS:
8541219000
TARIC:
8542399000
MXHTS:
8542399901
ECCN:
EAR99

Advanced Linear Devices ALD210800/ALD210800A Precision N-Channel EPAD® MOSFET Arrays - INACTIVE

Advanced Linear Devices ALD210800/ALD210800A Precision N-Channel EPAD® MOSFET Arrays are precision matched at the factory using ALD's proven EPAD® CMOS technology. These quad monolithic devices are enhanced additions to the ALD110800A/ALD110800 EPAD® MOSFET Family, with increased forward transconductance and output conductance, particularly at very low supply voltages. Intended for low voltage, low power small signal applications, the ALD210800/ALD210800A features Zero-Threshold™ voltage, which enables circuit designs with input/output signals referenced to GND at enhanced operating voltage ranges. With these devices, a circuit with multiple cascading stages can be built to operate at extremely low supply/bias voltage levels.
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