Infineon Technologies CoolSiC™ 1200V SiC Trench MOSFETs
Infineon Technologies CoolSiC™ 1200V SiC Trench MOSFETs combine the strong physical characteristics of Silicon Carbide with unique features that increase the device performance, robustness, and ease of use. The CoolSiC 1200V SiC Trench MOSFETs are built on a state-of-the-art trench semiconductor process, optimized to deliver both the lowest losses in the application and the highest reliability in operation. Suitable for high temperature and harsh environment operations, these devices enable the simplified and cost-effective deployment of the highest system efficiency.
The CoolSiC™ 1200V SiC Trench MOSFETs are offered in compact TO-247-3 and TO-247-4 packages. The TO-247-4 package contains an additional connection to the source (Kelvin connection) that is used as a reference potential for the gate driving voltage, thereby eliminating the effect of voltage drops over the source inductance. The result is even lower switching losses than for the TO-247-3 version, especially at higher currents and higher switching frequencies.
Features
- Very low switching losses
- Threshold-free on state characteristic
- Wide gate-source voltage range
- Benchmark gate threshold voltage, VGS(th) = 4.5V
- 0V turn-off gate voltage
- Fully controllable dV/dt
- Commutation robust body diode, ready for synchronous rectification
- Temperature independent turn-off switching losses
- Superior gate oxide reliability
- Best in class switching and conduction losses
- IGBT compatible driving (+15V)
- Threshold voltage, Vth >4V
- Short-circuit robustness
- Highest efficiency for reduced cooling effort
- Longer lifetime and higher reliability
- Higher frequency operation
- Reduction in system cost
- Increased power density
- Reduced system complexity
- Ease of design and implementation
Applications
- Photo-Voltaic inverters (PV)
- Energy storage and battery charging
- Uninterruptable Power Supplies (UPS)
- Switch Mode Power Supplies (SMPS)
- Industrial drives
- Medical
Development Tools
Infineon Technologies REF-DAB11KIZSICSYS Converter Board
A DC-DC stage with a wide range output using 2 inductors and 2 capacitors (CLLC) resonant network.
Infineon Technologies REF_SiC_D2Pak_MC & REF_SiC_D2Pak_BP Boards
Allows users to evaluate the 1200V CoolSiC™ MOSFET in D2Pak with coreless isolated gate drivers.
Infineon Technologies REF-DR3KIMBGSICMA Reference Board
Contains two PCBs, including a driver circuit & a three-phase inverter for motor-drive application.
Infineon Technologies CoolSiC™ MOSFET 1200V Evaluation Platform
Demonstrates the 45mΩ CoolSiC™ 1200V SiC Trench MOSFETs and EiceDriver™ Gate Driver ICs.
Infineon Technologies EVAL-M5-IMZ120R-SIC Motor Drive Evaluation Board
Evaluation Board for motor drive applications based on 1200V CoolSiC™ MOSFETs.
Infineon Technologies EiceDRIVER™ 1EDI30xxAS Evaluation Board
Demonstration platform for the 1EDI302xAS and 1EDI303xAS EiceDRIVER™ Isolated Gate Drivers.
Infineon Technologies REF-1EDC60H12AHDPV2 Bipolar Supply Function Board
Bipolar Supply Function Board is the second drive card of the universal evaluation platform.
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