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GCMX005A120S3B1-N

Name: SemiQ GCMX005A120S3B1-N
Brand: SemiQ
SKU: 148-GCMX005A120S3B1N
Price: 298.31 CAD
Availability: OutOfStock

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Mouser #:

148-GCMX005A120S3B1N

Mfr. #:

GCMX005A120S3B1-N

Mfr.:

SemiQ

Description:

MOSFET Modules 1200V, 5mohm SiC MOSFET Half Bridge Module

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

GCMX005A120S3B1-N Datasheet (PDF)

ECAD Model:

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Learn more about SemiQ GCMX005A120S3B1-N

Availability

Stock:: Non-Stocked

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Factory Lead-Time:: 20 Weeks Estimated factory production time.

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Unit Price:

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Ext. Price:

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Est. Tariff:

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Pricing (CAD)

Qty.	Unit Price	Ext. Price
	$298.31	$298.31
	$271.97	$2,719.70
105	Quote

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	SemiQ
Product Category:	MOSFET Modules
RoHS:
Technology:	SiC
Mounting Style:	Screw Mount
Package / Case:	S3
Transistor Polarity:	N-Channel
Number of Channels:	2 Channel
Vds - Drain-Source Breakdown Voltage:	1.2 kV
Id - Continuous Drain Current:	424 A
Rds On - Drain-Source Resistance:	7 mOhms
Vgs - Gate-Source Voltage:	- 5 V, + 20 V
Vgs th - Gate-Source Threshold Voltage:	4 V
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	1.531 kW
Series:	GCMX
Packaging:	Bulk
Brand:	SemiQ
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Fall Time:	24 ns
Height:	30.9 mm
Length:	106.4 mm
Product:	Modules
Product Type:	MOSFET Modules
Rise Time:	18 ns
Factory Pack Quantity:	15
Subcategory:	Discrete and Power Modules
Type:	Half Bridge Module
Typical Turn-Off Delay Time:	114 ns
Typical Turn-On Delay Time:	65 ns
Vf - Forward Voltage:	4 V
Width:	61.4 mm

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Datasheet

GCMX005A120S3B1-N Datasheet (PDF)

USHTS:: 8541100080
ECCN:: EAR99

GCMX 1200V SiC MOSFET Half-Bridge Modules

SemiQ GCMX 1200V SiC MOSFET Half-Bridge Modules offer low switching losses, low junction-to-case thermal resistance, and very rugged and easy mounting. These modules directly mount the heatsink (isolated package) and include a Kelvin reference for stable operation. All parts have been rigorously tested to withstand voltages above 1350V. The standout feature of these modules is the robust 1200V drain-source voltage. The GCMX half-bridge modules operate at a 175°C junction temperature and are RoHS-compliant. Typical applications include photovoltaic inverters, battery chargers, energy storage systems, and high-voltage DC-to-DC converters.

GCMX005A120S3B1-N QSiC™ MOSFET

SemiQ GCMX005A120S3B1-N QSiC™ MOSFET offers enhanced design flexibility and performance in current applications. The QSiC MOSFET operates with near-zero switching loss, increasing efficiency while reducing heat dissipation and the need for large heatsinks. Standing at 26.3mm in height with an industry-standard 62mm footprint, this module addresses the size, weight, and power demands of challenging applications. SemiQ GCMX005A120S3B1-N QSiC MOSFET features a 400A current rating and is suitable for induction heaters, welding equipment, and uninterruptible power supplies (UPS).