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Bench Talk for Design Engineers

Bench Talk

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Bench Talk for Design Engineers | The Official Blog of Mouser Electronics


An Automotive Grade Above
On June 29, 2021 in All, Automotive by Vishay Intertechnology Inc.
Vishay Intertechnology Inc.
Vishay understands the challenge of designing for the road. They design and manufacture the fundamental building blocks of every electronic system. When it comes to automobiles and other types of vehicles, every component is important, down to the last resistor.
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1276 Views
Tagged With: aec qualification, automotive, capacitors, diodes, inductors, mosfets, optoelectronics, passives components, rectifiers, resistors, semiconductors, vishay
Infineon Technologies CoolSiC™ Works in the Trenches
On May 12, 2021 in All, EIT 2021, Power, Wide Bandgap by Paul Golata
Paul Golata
Infineon Silicon Carbide CoolSiC™ MOSFETs and Diodes provide a portfolio that addresses the need for smarter, more efficient energy generation, transmission, and consumption. Infineon’s trench MOS technology is leading the way in power management.
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1800 Views
Tagged With: carbide, coolsic, diode, diodes, infineon technologies, mosfet, mosfets, oxide, power, power management, reliability, sic, silicon, silicon carbide, system, transistor, trench, wide bandgap
Smart Cooking with RF Energy
On May 20, 2015 in All, Power, RF by Rudy Ramos
Rudy Ramos
With the exception of changes to the exterior design, to match the flavor of the decade’s décor and the addition of digital readouts, the microwave oven has pretty much remained the same since its inception. That is, until now, with the advent of new high-power LDMOS RF transistor technology, that outdated kitchen appliance we’ve all come to depend on for heating up our lunches might just be getting a new lease on life.
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23185 Views
Tagged With: Magnetron, Microwaves, MOSFETS, Power, RF, Solid State RF Transistors
GaN the Giant Killer?
On January 28, 2014 in Wide Bandgap by Barry Manz
Barry Manz
Gallium nitride (GaN) has evolved from a promising laboratory curiosity to a major force in RF power generation in less than a decade. Much has been made of its inherent advantages, leading to projections that it will displace gallium arsenide and silicon LDMOS. However, for a variety of reasons GaN is more likely to complement its more entrenched rivals than displace them.
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18599 Views
Tagged With: GaN, MOSFETS, RF Power, Silicon, Wide Bandgap

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